This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
• Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
• Details new architectures and current modeling concepts for non-volatile memory devices;
• Focuses on conduction through multi-layer gate dielectrics stacks.